Chemical-mechanical polishing composition and polishing method

The present invention provides a chemical-mechanical polishing composition with which it is possible to polish a molybdenum film and a silicon dioxide film at a stable polishing rate, and suppress corrosion of the molybdenum film. A chemical-mechanical polishing composition according to the present...

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Bibliographische Detailangaben
Hauptverfasser:	YAMAGUCHI, MISATO, ISHIMAKI, KOKI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING
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Beschreibung
Zusammenfassung:	The present invention provides a chemical-mechanical polishing composition with which it is possible to polish a molybdenum film and a silicon dioxide film at a stable polishing rate, and suppress corrosion of the molybdenum film. A chemical-mechanical polishing composition according to the present invention contains: abrasive grains (A); an iron(III) compound (B); and at least one type of metal atom selected from the group consisting of Al atoms, Mn atoms, and Zn atoms. The total Al, Mn, and Zn atom content is 0.1 ppm to 100 ppm, inclusive.