Method and device for depositing a layer containing a group five element in a process chamber, and subsequent cleaning of the process chamber
The invention relates to a method for depositing layers containing a group five element on a substrate (6) in a CVD reactor, in which method the process gas is fed into the process chamber (2) through a central gas inlet element (11) and flows through the process chamber (2) in the radial direction....
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| creator | LEHNEN, PEER LARHRIB, HASSAN MICCOLI, ILIO |
| description | The invention relates to a method for depositing layers containing a group five element on a substrate (6) in a CVD reactor, in which method the process gas is fed into the process chamber (2) through a central gas inlet element (11) and flows through the process chamber (2) in the radial direction. After the layer has been deposited, the process chamber (2) is cleaned, wherein the process chamber (2) is heated to a first cleaning temperature (T1); wherein, after the first cleaning temperature (T2) has been reached, a halogen or a halogen compound is fed into the process chamber (2) in a first cleaning step (21); wherein, after the first cleaning step (21), the process chamber (2) is brought to a second cleaning temperature (T2); wherein, after the second cleaning temperature (T2) has been reached, O2 is fed into the process chamber (2) in a second cleaning step (22); wherein, after the second cleaning step (22), the process chamber (2) is brought to a third cleaning temperature (T3); wherein, after the third |
| format | Patent |
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After the layer has been deposited, the process chamber (2) is cleaned, wherein the process chamber (2) is heated to a first cleaning temperature (T1); wherein, after the first cleaning temperature (T2) has been reached, a halogen or a halogen compound is fed into the process chamber (2) in a first cleaning step (21); wherein, after the first cleaning step (21), the process chamber (2) is brought to a second cleaning temperature (T2); wherein, after the second cleaning temperature (T2) has been reached, O2 is fed into the process chamber (2) in a second cleaning step (22); wherein, after the second cleaning step (22), the process chamber (2) is brought to a third cleaning temperature (T3); wherein, after the third</description><language>chi ; eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230801&DB=EPODOC&CC=TW&NR=202330981A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230801&DB=EPODOC&CC=TW&NR=202330981A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEHNEN, PEER</creatorcontrib><creatorcontrib>LARHRIB, HASSAN</creatorcontrib><creatorcontrib>MICCOLI, ILIO</creatorcontrib><title>Method and device for depositing a layer containing a group five element in a process chamber, and subsequent cleaning of the process chamber</title><description>The invention relates to a method for depositing layers containing a group five element on a substrate (6) in a CVD reactor, in which method the process gas is fed into the process chamber (2) through a central gas inlet element (11) and flows through the process chamber (2) in the radial direction. After the layer has been deposited, the process chamber (2) is cleaned, wherein the process chamber (2) is heated to a first cleaning temperature (T1); wherein, after the first cleaning temperature (T2) has been reached, a halogen or a halogen compound is fed into the process chamber (2) in a first cleaning step (21); wherein, after the first cleaning step (21), the process chamber (2) is brought to a second cleaning temperature (T2); wherein, after the second cleaning temperature (T2) has been reached, O2 is fed into the process chamber (2) in a second cleaning step (22); wherein, after the second cleaning step (22), the process chamber (2) is brought to a third cleaning temperature (T3); wherein, after the third</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjrEKwjAYhLs4iPoOv7tCbRcdRRQXt4Jj-U0vbSBNYpIWfAjf2VqdnJzuOD4-bpo8L4iNrYhNRRV6JUDS-qE6G1RUpiYmzQ94EtZEVuYz1d52jqTqQdBoYSIpM-zOW4EQSDTc3uBXozd0t4B794aEBo8KKyk2-OXnyUSyDlh8c5YsT8ficF4Pd0oExwIGsSyuWZrlebrbbvb5P8wL_tRNig</recordid><startdate>20230801</startdate><enddate>20230801</enddate><creator>LEHNEN, PEER</creator><creator>LARHRIB, HASSAN</creator><creator>MICCOLI, ILIO</creator><scope>EVB</scope></search><sort><creationdate>20230801</creationdate><title>Method and device for depositing a layer containing a group five element in a process chamber, and subsequent cleaning of the process chamber</title><author>LEHNEN, PEER ; LARHRIB, HASSAN ; MICCOLI, ILIO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202330981A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>LEHNEN, PEER</creatorcontrib><creatorcontrib>LARHRIB, HASSAN</creatorcontrib><creatorcontrib>MICCOLI, ILIO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEHNEN, PEER</au><au>LARHRIB, HASSAN</au><au>MICCOLI, ILIO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method and device for depositing a layer containing a group five element in a process chamber, and subsequent cleaning of the process chamber</title><date>2023-08-01</date><risdate>2023</risdate><abstract>The invention relates to a method for depositing layers containing a group five element on a substrate (6) in a CVD reactor, in which method the process gas is fed into the process chamber (2) through a central gas inlet element (11) and flows through the process chamber (2) in the radial direction. After the layer has been deposited, the process chamber (2) is cleaned, wherein the process chamber (2) is heated to a first cleaning temperature (T1); wherein, after the first cleaning temperature (T2) has been reached, a halogen or a halogen compound is fed into the process chamber (2) in a first cleaning step (21); wherein, after the first cleaning step (21), the process chamber (2) is brought to a second cleaning temperature (T2); wherein, after the second cleaning temperature (T2) has been reached, O2 is fed into the process chamber (2) in a second cleaning step (22); wherein, after the second cleaning step (22), the process chamber (2) is brought to a third cleaning temperature (T3); wherein, after the third</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Method and device for depositing a layer containing a group five element in a process chamber, and subsequent cleaning of the process chamber |
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