Method and device for depositing a layer containing a group five element in a process chamber, and subsequent cleaning of the process chamber

The invention relates to a method for depositing layers containing a group five element on a substrate (6) in a CVD reactor, in which method the process gas is fed into the process chamber (2) through a central gas inlet element (11) and flows through the process chamber (2) in the radial direction. After the layer has been deposited, the process chamber (2) is cleaned, wherein the process chamber (2) is heated to a first cleaning temperature (T1); wherein, after the first cleaning temperature (T2) has been reached, a halogen or a halogen compound is fed into the process chamber (2) in a first cleaning step (21); wherein, after the first cleaning step (21), the process chamber (2) is brought to a second cleaning temperature (T2); wherein, after the second cleaning temperature (T2) has been reached, O2 is fed into the process chamber (2) in a second cleaning step (22); wherein, after the second cleaning step (22), the process chamber (2) is brought to a third cleaning temperature (T3); wherein, after the third