Resist composition, method for forming resist pattern, polymer compound, and compound
Provided is a resist composition which generates an acid upon exposure to light and for which the solubility in a developing solution changes due to the action of an acid. The resist composition contains a resin component (A1) for which the solubility in a developing solution changes due to the acti...
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| creator | FUJINAMI, TETSUO KATO, HIROKI ISHII, SHUICHI |
| description | Provided is a resist composition which generates an acid upon exposure to light and for which the solubility in a developing solution changes due to the action of an acid. The resist composition contains a resin component (A1) for which the solubility in a developing solution changes due to the action of an acid. The resin component (A1) has a constituent unit (a0) derived from a compound represented by general formula (a0). In the formula, W is a polymerizable group. Ar is an aromatic hydrocarbon group. -OH is a hydroxyl group. La0 is a divalent linking group. Ya0 is a single bond or a divalent linking group. Ra01 and Ra02 are each independently a hydrogen atom, a fluorine atom or a fluorinated alkyl group. n0 is an integer between 1 and 4. m is an integer of 1 or higher, and Mm+ is an organic cation having a valency of m. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW202330465A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW202330465A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW202330465A3</originalsourceid><addsrcrecordid>eNrjZAgNSi3OLC5RSM7PLcgvzizJzM_TUchNLcnIT1FIyy8C4dzMvHSFIoiygsSSktQioJKC_JzK3NQiiL7SvBQdhcS8FDiPh4E1LTGnOJUXSnMzKLq5hjh76KYW5MenFhckJqfmpZbEh4QbGRgZGxuYmJk6GhOjBgATJzmr</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Resist composition, method for forming resist pattern, polymer compound, and compound</title><source>esp@cenet</source><creator>FUJINAMI, TETSUO ; KATO, HIROKI ; ISHII, SHUICHI</creator><creatorcontrib>FUJINAMI, TETSUO ; KATO, HIROKI ; ISHII, SHUICHI</creatorcontrib><description>Provided is a resist composition which generates an acid upon exposure to light and for which the solubility in a developing solution changes due to the action of an acid. The resist composition contains a resin component (A1) for which the solubility in a developing solution changes due to the action of an acid. The resin component (A1) has a constituent unit (a0) derived from a compound represented by general formula (a0). In the formula, W is a polymerizable group. Ar is an aromatic hydrocarbon group. -OH is a hydroxyl group. La0 is a divalent linking group. Ya0 is a single bond or a divalent linking group. Ra01 and Ra02 are each independently a hydrogen atom, a fluorine atom or a fluorinated alkyl group. n0 is an integer between 1 and 4. m is an integer of 1 or higher, and Mm+ is an organic cation having a valency of m.</description><language>chi ; eng</language><subject>ACYCLIC OR CARBOCYCLIC COMPOUNDS ; APPARATUS SPECIALLY ADAPTED THEREFOR ; CHEMISTRY ; CINEMATOGRAPHY ; COMPOSITIONS BASED THEREON ; ELECTROGRAPHY ; HOLOGRAPHY ; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS ; MATERIALS THEREFOR ; METALLURGY ; ORGANIC CHEMISTRY ; ORGANIC MACROMOLECULAR COMPOUNDS ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230801&DB=EPODOC&CC=TW&NR=202330465A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230801&DB=EPODOC&CC=TW&NR=202330465A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FUJINAMI, TETSUO</creatorcontrib><creatorcontrib>KATO, HIROKI</creatorcontrib><creatorcontrib>ISHII, SHUICHI</creatorcontrib><title>Resist composition, method for forming resist pattern, polymer compound, and compound</title><description>Provided is a resist composition which generates an acid upon exposure to light and for which the solubility in a developing solution changes due to the action of an acid. The resist composition contains a resin component (A1) for which the solubility in a developing solution changes due to the action of an acid. The resin component (A1) has a constituent unit (a0) derived from a compound represented by general formula (a0). In the formula, W is a polymerizable group. Ar is an aromatic hydrocarbon group. -OH is a hydroxyl group. La0 is a divalent linking group. Ya0 is a single bond or a divalent linking group. Ra01 and Ra02 are each independently a hydrogen atom, a fluorine atom or a fluorinated alkyl group. n0 is an integer between 1 and 4. m is an integer of 1 or higher, and Mm+ is an organic cation having a valency of m.</description><subject>ACYCLIC OR CARBOCYCLIC COMPOUNDS</subject><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CHEMISTRY</subject><subject>CINEMATOGRAPHY</subject><subject>COMPOSITIONS BASED THEREON</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS</subject><subject>MATERIALS THEREFOR</subject><subject>METALLURGY</subject><subject>ORGANIC CHEMISTRY</subject><subject>ORGANIC MACROMOLECULAR COMPOUNDS</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAgNSi3OLC5RSM7PLcgvzizJzM_TUchNLcnIT1FIyy8C4dzMvHSFIoiygsSSktQioJKC_JzK3NQiiL7SvBQdhcS8FDiPh4E1LTGnOJUXSnMzKLq5hjh76KYW5MenFhckJqfmpZbEh4QbGRgZGxuYmJk6GhOjBgATJzmr</recordid><startdate>20230801</startdate><enddate>20230801</enddate><creator>FUJINAMI, TETSUO</creator><creator>KATO, HIROKI</creator><creator>ISHII, SHUICHI</creator><scope>EVB</scope></search><sort><creationdate>20230801</creationdate><title>Resist composition, method for forming resist pattern, polymer compound, and compound</title><author>FUJINAMI, TETSUO ; KATO, HIROKI ; ISHII, SHUICHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202330465A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>ACYCLIC OR CARBOCYCLIC COMPOUNDS</topic><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CHEMISTRY</topic><topic>CINEMATOGRAPHY</topic><topic>COMPOSITIONS BASED THEREON</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS</topic><topic>MATERIALS THEREFOR</topic><topic>METALLURGY</topic><topic>ORGANIC CHEMISTRY</topic><topic>ORGANIC MACROMOLECULAR COMPOUNDS</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>THEIR PREPARATION OR CHEMICAL WORKING-UP</topic><toplevel>online_resources</toplevel><creatorcontrib>FUJINAMI, TETSUO</creatorcontrib><creatorcontrib>KATO, HIROKI</creatorcontrib><creatorcontrib>ISHII, SHUICHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FUJINAMI, TETSUO</au><au>KATO, HIROKI</au><au>ISHII, SHUICHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Resist composition, method for forming resist pattern, polymer compound, and compound</title><date>2023-08-01</date><risdate>2023</risdate><abstract>Provided is a resist composition which generates an acid upon exposure to light and for which the solubility in a developing solution changes due to the action of an acid. The resist composition contains a resin component (A1) for which the solubility in a developing solution changes due to the action of an acid. The resin component (A1) has a constituent unit (a0) derived from a compound represented by general formula (a0). In the formula, W is a polymerizable group. Ar is an aromatic hydrocarbon group. -OH is a hydroxyl group. La0 is a divalent linking group. Ya0 is a single bond or a divalent linking group. Ra01 and Ra02 are each independently a hydrogen atom, a fluorine atom or a fluorinated alkyl group. n0 is an integer between 1 and 4. m is an integer of 1 or higher, and Mm+ is an organic cation having a valency of m.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ACYCLIC OR CARBOCYCLIC COMPOUNDS APPARATUS SPECIALLY ADAPTED THEREFOR CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY ORGANIC CHEMISTRY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS THEIR PREPARATION OR CHEMICAL WORKING-UP |
| title | Resist composition, method for forming resist pattern, polymer compound, and compound |
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