Resist composition, method for forming resist pattern, polymer compound, and compound

Resist composition, method for forming resist pattern, polymer compound, and compound

Provided is a resist composition which generates an acid upon exposure to light and for which the solubility in a developing solution changes due to the action of an acid. The resist composition contains a resin component (A1) for which the solubility in a developing solution changes due to the acti...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: FUJINAMI, TETSUO, KATO, HIROKI, ISHII, SHUICHI
Format: Patent
Sprache:chi ; eng
Schlagworte:
ACYCLIC OR CARBOCYCLIC COMPOUNDS
APPARATUS SPECIALLY ADAPTED THEREFOR
CHEMISTRY
CINEMATOGRAPHY
COMPOSITIONS BASED THEREON
ELECTROGRAPHY
HOLOGRAPHY
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS
MATERIALS THEREFOR
METALLURGY
ORGANIC CHEMISTRY
ORGANIC MACROMOLECULAR COMPOUNDS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:Provided is a resist composition which generates an acid upon exposure to light and for which the solubility in a developing solution changes due to the action of an acid. The resist composition contains a resin component (A1) for which the solubility in a developing solution changes due to the action of an acid. The resin component (A1) has a constituent unit (a0) derived from a compound represented by general formula (a0). In the formula, W is a polymerizable group. Ar is an aromatic hydrocarbon group. -OH is a hydroxyl group. La0 is a divalent linking group. Ya0 is a single bond or a divalent linking group. Ra01 and Ra02 are each independently a hydrogen atom, a fluorine atom or a fluorinated alkyl group. n0 is an integer between 1 and 4. m is an integer of 1 or higher, and Mm+ is an organic cation having a valency of m.