Semiconductor structure

A semiconductor structure includes a substrate, a first nitride layer, a polarity inversion layer, a second nitride layer, and a third nitride layer. The first nitride layer is located on the substrate. The polarity inversion layer located on the surface of the first nitride layer converts the non-m...

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Bibliographische Detailangaben
Hauptverfasser:	LIN, PO-JUNG, SHIH, YING-RU, TSAO, CHENG-HAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A semiconductor structure includes a substrate, a first nitride layer, a polarity inversion layer, a second nitride layer, and a third nitride layer. The first nitride layer is located on the substrate. The polarity inversion layer located on the surface of the first nitride layer converts the non-metallic polarity surface of the first nitride layer to the metal polarity surface of the polarity inversion layer. The second nitride layer is located on the polarity inversion layer. The third nitride layer is located on the second nitride layer. The substrate, the first nitride layer, the polarity inversion layer, and the second nitride layer include iron element.