Non-volatile memory cell and non-volatile memory cell array

Non-volatile memory cell and non-volatile memory cell array

A non-volatile memory cell includes a first select transistor, a first floating gate transistor, a second floating gate transistor and a second select transistor. The first select transistor is connected with a program source line and a program word line. The first floating gate transistor includes...

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Bibliographische Detailangaben
Hauptverfasser: CHEN, CHIHUN, LIN, CHUN-HUNG
Format: Patent
Sprache:chi ; eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:A non-volatile memory cell includes a first select transistor, a first floating gate transistor, a second floating gate transistor and a second select transistor. The first select transistor is connected with a program source line and a program word line. The first floating gate transistor includes a floating gate. The first floating gate transistor is connected with the first select transistor and a program bit line. The second floating gate transistor includes a floating gate. The second floating gate transistor is connected with a read source line. The second select transistor is connected with the second floating gate transistor, the read word line and the read bit line. The floating gate of the second floating gate transistor is connected with the floating gate of the first floating gate transistor.