Semiconductor device assemblies including monolithic silicon structures for thermal dissipation and methods of making the same

A semiconductor device assembly is provided. The assembly includes a first semiconductor device including a plurality of electrical contacts on an upper surface thereof; a monolithic silicon structure having a lower surface in contact with the upper surface of the first semiconductor device, the mon...

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Bibliographische Detailangaben
Hauptverfasser: PAREKH, KUNAL R, PAREKH, ANGELA
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:A semiconductor device assembly is provided. The assembly includes a first semiconductor device including a plurality of electrical contacts on an upper surface thereof; a monolithic silicon structure having a lower surface in contact with the upper surface of the first semiconductor device, the monolithic silicon structure including a cavity extending from the lower surface completely through a body of the monolithic silicon structure to a top surface of the monolithic silicon structure; and a second semiconductor device disposed in the cavity, the second semiconductor device including a plurality of interconnects, each operatively coupled to a corresponding one of the plurality of electrical contacts.