Manufacturing method of InGaN quantum wells

A manufacturing method of InGaN quantum wells is provided to solve the problems of defects caused by lattice mismatch of the conventional InGaN quantum wells. The method includes placing a substrate with a GaN layer in a process chamber, making the process chamber reach a process vacuum, introducing...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	LO, I-KAI, SHIH, HUEI-JYUN, WANG, YINGIEH
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A manufacturing method of InGaN quantum wells is provided to solve the problems of defects caused by lattice mismatch of the conventional InGaN quantum wells. The method includes placing a substrate with a GaN layer in a process chamber, making the process chamber reach a process vacuum, introducing a plasma nitrogen molecular beam, an indium molecular beam and an aluminum molecular beam into the process chamber at the same time, controlling a flow rate ratio of the indium molecular beam to the aluminum molecular beam to form an InAlN film on the GaN layer, and forming a InGaN quantum well on the InAlN film. The flow rate ratio is 0.6, 1.0, 1.29, 1.67 or 3.0.