Sputtering target and method for manufacturing the same

To provide a sputtering target that suppresses generation of arcing and increases product yield, and to provide a method for manufacturing the same. A sputtering target includes a surface shape that satisfies (a) a minimum self-correlation length Sal of 3 [mu]m or more and 30 [mu]m or less in at lea...

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Bibliographische Detailangaben
Hauptverfasser:	AONO, MASAHIRO, TADOKORO, JUN, YAGI, SHOUHEI, NAGASHIMA, TAKUYA, KAMADA, TOMONARI, EGUCHI, TOYOKAZU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	To provide a sputtering target that suppresses generation of arcing and increases product yield, and to provide a method for manufacturing the same. A sputtering target includes a surface shape that satisfies (a) a minimum self-correlation length Sal of 3 [mu]m or more and 30 [mu]m or less in at least a non-sputter region when being observed through a laser microscope of 400 magnifications.