Composition for chemical mechanical polishing and polishing method

The present invention provides a composition for chemical mechanical polishing, the composition being capable of chemically mechanically polishing a semiconductor substrate that contains ruthenium or molybdenum, while maintaining a stable polishing rate and suppressing corrosion of ruthenium and mol...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	SUHARA, RYO, YAMAGUCHI, MISATO, KUBOTA, KIYONOBU, TAI, YUGO, ISHIMAKI, KOKI, AKAGI, SOICHIRO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING
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Beschreibung
Zusammenfassung:	The present invention provides a composition for chemical mechanical polishing, the composition being capable of chemically mechanically polishing a semiconductor substrate that contains ruthenium or molybdenum, while maintaining a stable polishing rate and suppressing corrosion of ruthenium and molybdenum. A composition for chemical mechanical polishing according to the present invention contains (A) abrasive grains and (D) a compound which has at least one functional group that is selected from the group consisting of an amino group and salts thereof, and at least one functional group that is selected from the group consisting of a carboxy group and salts thereof; and if MA (% by mass) is the content of the abrasive grains (A) and MD (% by mass) is the content of the compound (D), MA/MD is 0.1 to 700.