Polymer compound for forming photoresist underlayer, photoresist underlayer composition comprising the same for Extreme Ultra Violet

Provided is a photoresist underlayer film composition for extreme ultraviolet (EUV), which contains a polymer compound that allows reducing exposure energy when forming a photoresist film pattern and improves adhesion to a photoresist film. The photoresist underlayer film composition for EUV accordi...

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Bibliographische Detailangaben
Hauptverfasser:	CHOI, CHANG-SIK, KIM, HYUN-JIN, LEE, JUNG-YOUL, JU, DONG-KYU, KIM, TAE-IK
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	Provided is a photoresist underlayer film composition for extreme ultraviolet (EUV), which contains a polymer compound that allows reducing exposure energy when forming a photoresist film pattern and improves adhesion to a photoresist film. The photoresist underlayer film composition for EUV according to the present invention comprises, with respect to the total weight of the photoresist underlayer film composition for EUV, 0.02-1.00 wt% of the polymer compound, 0.005-1.0 wt% of a crosslinking agent, and 0.001-0.5 wt% of an acid generator, with the remainder being an organic solvent.