Semiconductor device
This semiconductor device has: a plurality of first transistors arranged in a first direction; at least one dummy structure provided between the plurality of first transistors; a plurality of second transistors arranged in a specific direction; a first bump that, in a plan view, lies astride the plu...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | This semiconductor device has: a plurality of first transistors arranged in a first direction; at least one dummy structure provided between the plurality of first transistors; a plurality of second transistors arranged in a specific direction; a first bump that, in a plan view, lies astride the plurality of first transistors and the at least one dummy structure; and a second bump that, in a plan view, lies astride the plurality of second transistors. The height of the first transistors is lower than the height of the dummy structure and the height of the second transistors. In the first direction, the pitch between two of the first transistors arranged so as to have the dummy structure therebetween is smaller than the pitch between two of the second transistors arranged so as to have another one of the second transistors therebetween. |
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