Dynamic random access memory structure and manufacturing method therefore

A dynamic random access memory structure including a substrate, a buried word line structure, a bit line structure, a contact, spacers, and a pad is provided. The buried word line structure is located in the substrate. The bit line structure is located on the substrate on one side of the buried word...

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1. Verfasser:	HUANG, KAI-JYUN
Format:	Patent
Sprache:	chi ; eng
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creator	HUANG, KAI-JYUN
description	A dynamic random access memory structure including a substrate, a buried word line structure, a bit line structure, a contact, spacers, and a pad is provided. The buried word line structure is located in the substrate. The bit line structure is located on the substrate on one side of the buried word line structure. The contact is located on the substrate on another side of the buried word line structure. The spacers are located on two sides of the contact. The pad is located on the contact and located between two adjacent spacers.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_TW202320298A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>TW202320298A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_TW202320298A3</originalsourceid><addsrcrecordid>eNrjZPB0qcxLzM1MVihKzEvJz1VITE5OLS5WyE3NzS-qVCguKSpNLiktSlUAyirkJuaVpiWC-Jl56UAlJRn5KQolGalFqWn5Rak8DKxpiTnFqbxQmptB0c01xNlDN7UgPz61uCAxOTUvtSQ-JNzIwMgYiC0tHI2JUQMANR01ig</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Dynamic random access memory structure and manufacturing method therefore</title><source>esp@cenet</source><creator>HUANG, KAI-JYUN</creator><creatorcontrib>HUANG, KAI-JYUN</creatorcontrib><description>A dynamic random access memory structure including a substrate, a buried word line structure, a bit line structure, a contact, spacers, and a pad is provided. The buried word line structure is located in the substrate. The bit line structure is located on the substrate on one side of the buried word line structure. The contact is located on the substrate on another side of the buried word line structure. The spacers are located on two sides of the contact. The pad is located on the contact and located between two adjacent spacers.</description><language>chi ; eng</language><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230516&DB=EPODOC&CC=TW&NR=202320298A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230516&DB=EPODOC&CC=TW&NR=202320298A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HUANG, KAI-JYUN</creatorcontrib><title>Dynamic random access memory structure and manufacturing method therefore</title><description>A dynamic random access memory structure including a substrate, a buried word line structure, a bit line structure, a contact, spacers, and a pad is provided. The buried word line structure is located in the substrate. The bit line structure is located on the substrate on one side of the buried word line structure. The contact is located on the substrate on another side of the buried word line structure. The spacers are located on two sides of the contact. The pad is located on the contact and located between two adjacent spacers.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPB0qcxLzM1MVihKzEvJz1VITE5OLS5WyE3NzS-qVCguKSpNLiktSlUAyirkJuaVpiWC-Jl56UAlJRn5KQolGalFqWn5Rak8DKxpiTnFqbxQmptB0c01xNlDN7UgPz61uCAxOTUvtSQ-JNzIwMgYiC0tHI2JUQMANR01ig</recordid><startdate>20230516</startdate><enddate>20230516</enddate><creator>HUANG, KAI-JYUN</creator><scope>EVB</scope></search><sort><creationdate>20230516</creationdate><title>Dynamic random access memory structure and manufacturing method therefore</title><author>HUANG, KAI-JYUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_TW202320298A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><toplevel>online_resources</toplevel><creatorcontrib>HUANG, KAI-JYUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HUANG, KAI-JYUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Dynamic random access memory structure and manufacturing method therefore</title><date>2023-05-16</date><risdate>2023</risdate><abstract>A dynamic random access memory structure including a substrate, a buried word line structure, a bit line structure, a contact, spacers, and a pad is provided. The buried word line structure is located in the substrate. The bit line structure is located on the substrate on one side of the buried word line structure. The contact is located on the substrate on another side of the buried word line structure. The spacers are located on two sides of the contact. The pad is located on the contact and located between two adjacent spacers.</abstract><oa>free_for_read</oa></addata></record>
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title	Dynamic random access memory structure and manufacturing method therefore
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T13%3A08%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HUANG,%20KAI-JYUN&rft.date=2023-05-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ETW202320298A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true