Dynamic random access memory structure and manufacturing method therefore

A dynamic random access memory structure including a substrate, a buried word line structure, a bit line structure, a contact, spacers, and a pad is provided. The buried word line structure is located in the substrate. The bit line structure is located on the substrate on one side of the buried word line structure. The contact is located on the substrate on another side of the buried word line structure. The spacers are located on two sides of the contact. The pad is located on the contact and located between two adjacent spacers.