Micro inert anode array for die level electrodeposition thickness distribution control

Metal may be electroplated on a semiconductor substrate in an electroplating chamber with a micro inert anode array positioned proximate to the semiconductor substrate having one or more die. The micro inert anode array includes a plurality of micro inert anode elements that are independently contro...

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Bibliographische Detailangaben
Hauptverfasser: MAYER, STEVEN T, THORKELSSON, KARI, HASKELL, BENJAMIN ALLEN
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:Metal may be electroplated on a semiconductor substrate in an electroplating chamber with a micro inert anode array positioned proximate to the semiconductor substrate having one or more die. The micro inert anode array includes a plurality of micro inert anode elements that are independently controllable. Current applied to the micro inert anode elements provides a current distribution in the array that may be based at least in part on a die layout in the semiconductor substrate or based at least in part on global within-wafer corrections. The current distribution may achieve uniform plating thickness even with a non-uniform distribution of features in the die of the semiconductor substrate. In some implementations, current distribution may be adjusted in the array during substrate rotation according to a rotational path of the semiconductor substrate.