Electrode-dielectric nozzle for plasma processing

Systems and device for removing edge bead accumulated on an edge of a wafer includes a first electrode disposed in a center of a nozzle used within a process chamber and a second electrode embedded within a dielectric material that surrounds the first electrode. A first channel is defined between the first electrode and the dielectric material and is used to receive a first gas from a first gas source. A second channel is defined between the dielectric material and an outer wall of the nozzle and is used to receive a second gas. RF power source is coupled to the nozzle so as to provide RF power to the electrodes to generate plasma radicals of the first gas. An opening at a bottom of the nozzle is used to provide pressurized flow of plasma radicals toward an edge of the wafer positioned below the nozzle.