Gas quench for diffusion bonding

Exemplary methods of cooling a semiconductor component substrate may include heating the semiconductor component substrate to a temperature of greater than or about 500 DEG C in a chamber. The semiconductor component substrate may be or include aluminum. The methods may include delivering a gas into...

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Bibliographische Detailangaben
Hauptverfasser:	BEHNKE, JOSEPH F, AGARWAL, SUMIT, SOMMERS, JOSEPH FREDERICK
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS ANDNON-FERROUS ALLOYS CHEMISTRY CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERROUS OR NON-FERROUS ALLOYS MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING TREATMENT OF ALLOYS OR NON-FERROUS METALS WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	Exemplary methods of cooling a semiconductor component substrate may include heating the semiconductor component substrate to a temperature of greater than or about 500 DEG C in a chamber. The semiconductor component substrate may be or include aluminum. The methods may include delivering a gas into the chamber. The gas may be characterized by a temperature below or about 100 DEG C. The methods may include cooling the semiconductor component substrate to a temperature below or about 200 DEG C in a first time period of less than or about 1 minute.