Method for removing mono- to penta-fluoride from molybdenum, and method for manufacturing semiconductor device

Provided are: a method for removing MoFx or MoFx and MoOFx, wherein a halogen-containing gas is brought into contact with a member having MoFx or MoFx and MoOFx deposited or coated thereon (where x represents a number greater than 0 and less than 6) to remove the MoFx or the MoFx and MoOFx from the...

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Bibliographische Detailangaben
Hauptverfasser: KIKUCHI, AKIOU, SHINAGAWA, MASATO
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:Provided are: a method for removing MoFx or MoFx and MoOFx, wherein a halogen-containing gas is brought into contact with a member having MoFx or MoFx and MoOFx deposited or coated thereon (where x represents a number greater than 0 and less than 6) to remove the MoFx or the MoFx and MoOFx from the member; and a method for manufacturing a semiconductor device, the method comprising said removal method. By using these methods, provided are: a method for removing deposited or coated matter from a member on which MoFx or MoFx and MoOFx, which are incorporated into MoF6 as impurities, are deposited or coated; and a method for manufacturing a semiconductor device, the method comprising a step for removing deposited or coated matter from a manufacturing apparatus for a semiconductor device on which MoFx or MoFx and MoOFx are deposited or coated, wherein clogging or contamination of the manufacturing apparatus can be avoided.