Manufacturing method of metal compound film

A method for preparing a metal compound film comprises the following steps: step 1: placing a tray bearing a wafer to be deposited with a film into a reaction chamber and above a base; Step 2: the first mixed gas of the first inert gas and process gas is introduced into the reaction chamber, and the...

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Bibliographische Detailangaben
Hauptverfasser:	ZHANG, LU, ZHOU, LIN, WU, SHU-BO, YANG, JIAN, MA, YING-GONG, DUAN, JUN-XONG, CUI, YA-XIN, ZHAO, CHEN-GUANG, SONG, LING-YAN, ZHAI, HONG-TAO, XU, WEN-XUE, GUO, BING-LIANG, ZHEN, ZI-YANG, SHI, SHUAI-TAO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method for preparing a metal compound film comprises the following steps: step 1: placing a tray bearing a wafer to be deposited with a film into a reaction chamber and above a base; Step 2: the first mixed gas of the first inert gas and process gas is introduced into the reaction chamber, and the metal target in the reaction chamber is applied with excitation power to form a plasma with the first mixed gas. The plasma bombards the metal target to form a metal compound film on the wafer; At the same time, RF bias power is applied to the base to adjust the stress of the metal compound film. In step 2 of the invention, RF bias power is applied to the base to adjust the stress of the metal compound film when the metal compound film is formed on the wafer. The problem of bending or even falling off of the film under force is solved, thereby improving the reliability of the device.