Method for producing semiconductor substrate and resist underlayer film forming composition

The purpose of the present invention is to provide: a method for producing a semiconductor substrate, the method using a resist underlayer film forming composition which is capable of forming a resist underlayer film that has excellent solvent resistance and excellent pattern rectangularity; and a r...

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Bibliographische Detailangaben
Hauptverfasser:	EHARA, KENGO, DEI, SATOSHI, YONEDA, EIJI, KATAGIRI, TAKASHI, DOBASHI, MASATO, KOMATSU, HIROYUKI, YOSHINAKA, SHO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	The purpose of the present invention is to provide: a method for producing a semiconductor substrate, the method using a resist underlayer film forming composition which is capable of forming a resist underlayer film that has excellent solvent resistance and excellent pattern rectangularity; and a resist underlayer film forming composition. The present invention provides a method for producing a semiconductor substrate, the method comprising: a step in which a resist underlayer film forming composition is directly or indirectly applied to a substrate; a step in which a resist film forming composition is applied to a resist underlayer film that is formed by the above-described resist underlayer film forming composition application step; a step in which a resist film that is formed by the above-described resist film forming composition application step is subjected to light exposure by means of radiation; and a step in which at least the light-exposed resist film is developed. With respect to this method for pr