Semiconductor memory device

Semiconductor memory device

According to one embodiment, a semiconductor memory device comprises a substrate, a first conductive layer, and a second conductive layer arranged in this order in a first direction and separated from each other, a first semiconductor film extending in the first direction, intersecting the first con...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ARAI, SHINYA, MINO, AKIRA, NAKATSUKA, KEISUKE, SAKATA, KOICHI, HASHIMOTO, SUSUMU, OKADA, SHUNSUKE
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:According to one embodiment, a semiconductor memory device comprises a substrate, a first conductive layer, and a second conductive layer arranged in this order in a first direction and separated from each other, a first semiconductor film extending in the first direction, intersecting the first conductive layer, and being in contact with the second conductive layer, and a first charge storage film arranged between the first semiconductor film and the first conductive layer, and being in contact with the second conductive layer, wherein the first semiconductor film includes a first portion formed of an n-type semiconductor at approximately a same height as the first conductive layer.