Method of manufacturing semiconductor structure

Method of manufacturing semiconductor structure

A method of manufacturing a semiconductor structure including the following steps is provided. A substrate is provided. The substrate includes a first region and a second region. A first dielectric layer is formed on the substrate in the first region. A second dielectric layer is formed on the subst...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CHEN, HWI-HUANG, HUANG, WEIING, HSU, MING-SHUN, CHEN, WEN-JI
Format: Patent
Sprache:chi ; eng
Schlagworte:
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A method of manufacturing a semiconductor structure including the following steps is provided. A substrate is provided. The substrate includes a first region and a second region. A first dielectric layer is formed on the substrate in the first region. A second dielectric layer is formed on the substrate in the second region. A first gate is formed on the first dielectric layer. A second gate is formed on the second dielectric layer. A first spacer is formed on a sidewall of the first gate, and a second spacer is formed on a sidewall of the second gate at the same time. A patterned photoresist layer is formed. The patterned photoresist layer covers the first spacer and exposes the second spacer. The second spacer is removed by using the patterned photoresist layer as a mask. After the second spacer is removed, the patterned photoresist is removed. A third spacer is formed on a sidewall of the first spacer, and a fourth spacer is formed on the sidewall of the second gate at the same time.