Semiconductor device manufacturing method, substrate processing method, substrate processing device, and program

The present invention involves performing (a) a step for supplying a first feedstock gas to a substrate where a recessed structure has been provided to a surface thereof, and forming a first film having a prescribed adhesive force on an inner surface of the recessed structure, and (b) a step for sup...

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Bibliographische Detailangaben
Hauptverfasser:	AKAE, NAONORI, SHIMIZU, TOMIYUKI, OZAKI, TAKASHI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention involves performing (a) a step for supplying a first feedstock gas to a substrate where a recessed structure has been provided to a surface thereof, and forming a first film having a prescribed adhesive force on an inner surface of the recessed structure, and (b) a step for supplying a second feedstock gas to the substrate, and forming, on the first film, a second film having a lower adhesive force than the adhesive force of the first film.