Cleaning agent composition for post-CMP step

The purpose of the present invention is to provide a cleaning agent composition that is for a post-CMP step and that exhibits excellent removal performance and attachment inhibition for metal residues or organic residues remaining on a polished surface obtained by flattening a substrate, and that ha...

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Bibliographische Detailangaben
Hauptverfasser: BABU, SURYADEVARA V, VENKATARONAPPA, GOLLAHALLI ARUNKUMAR, FUJII, YUDAI, TONOYA, MASASHI, VEGI, SRI SIVA RAMA KRISHNA HANUP, SEO, JI-HOON, MIZUSHIMA, CHIHO, OTHMAN, ALI, HARIGAE, TAKAKO
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The purpose of the present invention is to provide a cleaning agent composition that is for a post-CMP step and that exhibits excellent removal performance and attachment inhibition for metal residues or organic residues remaining on a polished surface obtained by flattening a substrate, and that has excellent corrosion inhibition. The present invention relates to: a cleaning agent composition for a post-CMP step in a semiconductor production process, the composition including (1A) at least one compound selected from the group consisting of N-vinyllactam-based polymers and nonionic surfactants including an alkylene oxide adduct of an alcohol having 6 or more carbon atoms, (1B) an aliphatic amine, and (1C) at least one corrosion inhibitor selected from the group consisting of nitrogen-containing heterocyclic compounds and carboxylate compounds; and a cleaning agent composition for a post-CMP step, the composition including (2A) at least one compound selected from the group consisting of N-vinyllactam-based pol