Cleaning agent composition for post-CMP step
The purpose of the present invention is to provide a cleaning agent composition that is for a post-CMP step and that exhibits excellent removal performance and attachment inhibition for metal residues or organic residues remaining on a polished surface obtained by flattening a substrate, and that ha...
Gespeichert in:
Hauptverfasser: | , , , , , , , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The purpose of the present invention is to provide a cleaning agent composition that is for a post-CMP step and that exhibits excellent removal performance and attachment inhibition for metal residues or organic residues remaining on a polished surface obtained by flattening a substrate, and that has excellent corrosion inhibition. The present invention relates to: a cleaning agent composition for a post-CMP step in a semiconductor production process, the composition including (1A) at least one compound selected from the group consisting of N-vinyllactam-based polymers and nonionic surfactants including an alkylene oxide adduct of an alcohol having 6 or more carbon atoms, (1B) an aliphatic amine, and (1C) at least one corrosion inhibitor selected from the group consisting of nitrogen-containing heterocyclic compounds and carboxylate compounds; and a cleaning agent composition for a post-CMP step, the composition including (2A) at least one compound selected from the group consisting of N-vinyllactam-based pol |
---|