Compound, thin-film-forming raw material, thin film, and method for producing thin film

The present invention is a compound represented by general formula (1), a raw material for thin film formation that includes said compound, a thin film, and a method for producing a thin film. (In the formula, R1-R4 each independently represent a hydrogen atom or a C1-5 alkyl group, R5 and R6 each i...

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Bibliographische Detailangaben
Hauptverfasser: HATASE, MASAKO, MITSUI, CHIAKI
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The present invention is a compound represented by general formula (1), a raw material for thin film formation that includes said compound, a thin film, and a method for producing a thin film. (In the formula, R1-R4 each independently represent a hydrogen atom or a C1-5 alkyl group, R5 and R6 each independently represent a C1-5 alkyl group, A represents a C1-5 alkanediyl group, L represents a group represented by general formula (L-1) or (L-2), and M represents a hafnium atom, a zirconium atom, or a titanium atom. However, when R5 and R6 are methyl groups, A is a C2 alkanediyl group, and M is a titanium atom, then L represents a group represented by general formula (L-2).) (In the formula, R7-R9 each independently represent a C1-5 alkyl group, and * represents an atomic bond. However, when R5 and R6 are methyl groups, A is a C2 alkanediyl group, and M is a zirconium atom in general formula (1), then R7 represents a methyl group or an ethyl group.).