Semiconductor structure having deep metal line and method for forming the semiconductor structure

A semiconductor structure includes a substrate, a dielectric layer, a first conductive feature and a second conductive feature. The substrate includes a semiconductor device. The dielectric layer is disposed on the substrate. The first conductive feature is formed in the first dielectric layer. The...

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Bibliographische Detailangaben
Hauptverfasser: WU, CHIA-TIEN, LIAO, YUIEH, CHEN, HSIN-PING, CHU, WEIN, LEE, CHIAN, SU, CHIA-WEI, SHUE, SHAU-LIN
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:A semiconductor structure includes a substrate, a dielectric layer, a first conductive feature and a second conductive feature. The substrate includes a semiconductor device. The dielectric layer is disposed on the substrate. The first conductive feature is formed in the first dielectric layer. The second conductive feature penetrates the first conductive feature and the dielectric layer, and is electrically connected to the first conductive feature and the semiconductor device.