Method and apparatus for characterization of a microlithography mask

The invention relates to a method and an apparatus for characterizing a microlithography mask. In one aspect, in a method according to the invention, the mask (140, 240, 340, 740, 803) to be characterized is illuminated with light from a light source via an illumination optics unit (801), said light...

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Bibliographische Detailangaben
Hauptverfasser:	MATEJKA, ULRICH, PERLITZ, SASCHA, DEGUENTHER, MARKUS
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR MEASURING ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS TESTING TESTING STATIC OR DYNAMIC BALANCE OF MACHINES ORSTRUCTURES TESTING STRUCTURES OR APPARATUS NOT OTHERWISE PROVIDED FOR
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Beschreibung
Zusammenfassung:	The invention relates to a method and an apparatus for characterizing a microlithography mask. In one aspect, in a method according to the invention, the mask (140, 240, 340, 740, 803) to be characterized is illuminated with light from a light source via an illumination optics unit (801), said light having a wavelength of less than 30 nm, wherein light that passes in a used beam path from the light source (705) via the mask to a sensor unit (770, 806) is evaluated, wherein, at least intermittently, a portion of the light emitted by the light source is outcoupled from the used beam path by means of a mirror array (130, 230, 330, 630, 730) having a multitude of independently adjustable mirror elements, and wherein, intermittently by means of the mirror array, all light is outcoupled from the used beam path for establishment of a defined illumination time of the sensor unit.