CMP polishing liquid and polishing method

One aspect of the present disclosure provides a CMP polishing liquid for polishing a polysilicon, the CMP polishing liquid containing abrasive grains and a cationic polymer that contains at least one polymer selected from the group consisting of a polymer A which has a main chain containing a nitrog...

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Bibliographische Detailangaben
Hauptverfasser:	YAMASHITA, TAKASHI, OUCHI, MAYUMI, MINAMI, HISATAKA
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES TRANSPORTING
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Beschreibung
Zusammenfassung:	One aspect of the present disclosure provides a CMP polishing liquid for polishing a polysilicon, the CMP polishing liquid containing abrasive grains and a cationic polymer that contains at least one polymer selected from the group consisting of a polymer A which has a main chain containing a nitrogen atom and a carbon atom, and a hydroxyl group that is bonded to the carbon atom, and an allylamine polymer B. Another aspect of the present disclosure provides a polishing method which comprises a step for polishing a material to be polished with use of the CMP polishing liquid.