Metal precursor compound for manufacturing semiconductor thin film and metal-containing thin film manufactured using the same

The present invention relates to a metal precursor compound for manufacturing a semiconductor thin film, represented by Formula 1, and a metal-containing thin film manufacturing using the same.

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Bibliographische Detailangaben
Hauptverfasser:	KIM, SANG-HO, LEE, SANG-KYUNG, MOON, JI-WON, OH, HAN-SOL, NAM, HAE-WON, PARK, YONG-JOO, KIM, DONG-SU, HONG, CHANG-SUNG, SONG, KIANG, JANG, DONG-HAK, LEE, JEONG-YEOP
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY ORGANIC CHEMISTRY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention relates to a metal precursor compound for manufacturing a semiconductor thin film, represented by Formula 1, and a metal-containing thin film manufacturing using the same.