Method of depositing transition metal chalcogenide barrier layer, and interconnect structure

The current disclosure relates to deposition of a transition metal chalcogenide barrier layer. The method of depositing a transition metal chalcogenide barrier layer comprises providing a substrate having an opening into a reaction chamber, providing a transition metal precursor in the reaction cham...

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Bibliographische Detailangaben
Hauptverfasser:	DEIJKERS, JOHANNA HENRICA, BOL, AGEETH ANKE, SPREY, HESSEL, MACKUS, ADRIAAN JACOBUS MARTINUS, KESSELS, WILHELMUS M. M, MAES, JAN WILLEM
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The current disclosure relates to deposition of a transition metal chalcogenide barrier layer. The method of depositing a transition metal chalcogenide barrier layer comprises providing a substrate having an opening into a reaction chamber, providing a transition metal precursor in the reaction chamber in vapor phase and providing an reactive chalcogen species in the reaction chamber. The method may be a plasma-enhanced atomic layer deposition method. The disclosure further relates to an interconnect comprising a transition metal chalcogenide barrier layer.