Semiconductor device, integrated circuit structure, and method of forming integrated circuit structure

Embodiments include a contact structure and method of forming the same where the contact structure is deliberately positioned near the end of a metallic line. An opening is formed in an insulating structure positioned over the metallic line and then the opening is extended into the metallic line by...

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Bibliographische Detailangaben
Hauptverfasser: CHANG, YIUN, TU, YUAN-TIEN, HSIUNG, TEIH, WANG, YIN, WU, JYUN-DE
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:Embodiments include a contact structure and method of forming the same where the contact structure is deliberately positioned near the end of a metallic line. An opening is formed in an insulating structure positioned over the metallic line and then the opening is extended into the metallic line by an etching process. In the etching process, the line end forces etchant to concentrate back away from the line end, causing lateral etching of the extended opening. A subsequent contact is formed in the opening and enlarged opening.