Transistor device and methods of forming the same
In an embodiment, a method of forming a transistor device includes: etching a trench in a substrate; depositing a liner material in the trench with an atomic layer deposition process; depositing a flowable material on the liner material and in the trench with a contouring flowable chemical vapor dep...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | In an embodiment, a method of forming a transistor device includes: etching a trench in a substrate; depositing a liner material in the trench with an atomic layer deposition process; depositing a flowable material on the liner material and in the trench with a contouring flowable chemical vapor deposition process; converting the liner material and the flowable material to a solid insulation material, a portion of the trench remaining unfilled by the solid insulation material; and forming a hybrid fin in the portion of the trench unfilled by the solid insulation material. |
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