Non-diffusion type photodiode

A non-diffusion type photodiode is described and comprises: a substrate, a buffer layer, a light absorption layer, an intermediate layer, and a multiplication/window layer. The buffer layer is disposed on the substrate. The light absorption layer is disposed on the buffer layer. The intermediate lay...

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Bibliographische Detailangaben
Hauptverfasser:	CHEN, YUNGAO, HUANG, HUNG-WEN, WANG, YI-HSIANG, PAN, HUANG-WEI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A non-diffusion type photodiode is described and comprises: a substrate, a buffer layer, a light absorption layer, an intermediate layer, and a multiplication/window layer. The buffer layer is disposed on the substrate. The light absorption layer is disposed on the buffer layer. The intermediate layer is disposed on the light absorption layer and has a first boundary, wherein the intermediate layer is an I-type semiconductor layer or a graded refractive index layer. The multiplication/window layer is disposed on the intermediate layer and has a second boundary, wherein in a top view, the first boundary surrounds the second boundary, and a distance between the first boundary and the second boundary is greater than or equal to 1 micron.