Semiconductor device with multiple threshold voltages and method for fabricating the same
The present application discloses a semiconductor device with multiple threshold voltages and a method for fabricating the semiconductor device with the multiple threshold voltages. The semiconductor device includes a substrate, a first gate structure positioned in the substrate and having a first d...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The present application discloses a semiconductor device with multiple threshold voltages and a method for fabricating the semiconductor device with the multiple threshold voltages. The semiconductor device includes a substrate, a first gate structure positioned in the substrate and having a first depth and a first threshold voltage, and a second gate structure positioned in the substrate and having a second depth and a second threshold voltage. The first depth is greater than the second depth, and the first threshold voltage is different from the second threshold voltage. |
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