Semiconductor device

A semiconductor device including a substrate, a source region, a drain region, and a gate structure is provided. The source region and the drain region are respectively located in the substrate. The gate structure is located on the substrate and between the source region and the drain region. The ga...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: AI, SHIARNG, FUJIMAKI, HIROKAZU, PENG, TEIN, TAI, CHIHUNG, PU, SHIHIEH
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A semiconductor device including a substrate, a source region, a drain region, and a gate structure is provided. The source region and the drain region are respectively located in the substrate. The gate structure is located on the substrate and between the source region and the drain region. The gate structure includes a first gate and at least one second gate. The second gate is located between the first gate and the drain region. The first gate is separated from the second gate, and the second gate is electrically connected to the source region.