Semiconductor device, joining method, and joining system
According to the present invention, a first structural body has, formed on a first surface thereof, a first pad containing a first metal. A second structural body has a second pad that contains the first metal and is formed at a positon, in a second surface thereof joined to said first surface, corr...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | According to the present invention, a first structural body has, formed on a first surface thereof, a first pad containing a first metal. A second structural body has a second pad that contains the first metal and is formed at a positon, in a second surface thereof joined to said first surface, corresponding to the first pad. A metallic compound film contains a second metal that binds to the first metal, and at least oxygen or nitrogen, and joins the first surface of the first structural body with the second surface of the second structural body. |
|---|