CMP slurry composition and method of polishing tungsten pattern wafer

A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer using the same. The CMP composition includes: a solvent; an abrasive agent; and a dendritic poly(amidoamine) containing a terminal amino group. The invention can improve flatness of the...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	LEE, HYUN-WOO, SIM, SOO-YEON, LEE, JONG-WON, LEE, JI-HO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer using the same. The CMP composition includes: a solvent; an abrasive agent; and a dendritic poly(amidoamine) containing a terminal amino group. The invention can improve flatness of the tungsten pattern wafer while reducing corrosion rate.