Method for producing semiconductor wafers with epitaxial layer in a chamber of a deposition reactor

Method for producing semiconductor wafers with epitaxial layer in a chamber of a deposition reactor

Method for producing semiconductor wafers with epitaxial layer in a chamber of a deposition reactor of a plant, comprising repeatedly depositing an epitaxial layer on a substrate wafer in the chamber of the deposition reactor, producing a first number of semiconductor wafers with epitaxial layer, an...

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Bibliographische Detailangaben
Hauptverfasser: LICHTENEGGER, KORBINIAN, EDMAIER, WALTER, LAUER, MICHAEL, HECHT, HANNES
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Method for producing semiconductor wafers with epitaxial layer in a chamber of a deposition reactor of a plant, comprising repeatedly depositing an epitaxial layer on a substrate wafer in the chamber of the deposition reactor, producing a first number of semiconductor wafers with epitaxial layer, and at the same time conditioning a replacement chamber of the deposition reactor outside the plant by purging the replacement chamber with a purge gas; interrupting the repeated deposition of an epitaxial layer on a substrate wafer; replacing the chamber by the replacement chamber; and continuing the repeated deposition of an epitaxial layer on a substrate wafer in the replacement chamber of the deposition reactor, producing a second number of semiconductor wafers with epitaxial layer.