Chemical mechanical polishing slurry and method of using the same

The present invention provides a chemical mechanical polishing slurry for carbon-containing materials CMP and a method of use thereof. The chemical mechanical polishing slurry contains abrasives, oxidizers, carboxylic acid compounds and water. While maintaining a high removal rate of carbon-containi...

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Bibliographische Detailangaben
Hauptverfasser: ZHOU, JAIME JING-YU, LIU, TIAN-QI, CAI, XIN-YUAN, ZHOU, WEN-TING, TANG, HAO-JIE, MA, JEREMY JIAN, CHANG, BIN, JING, JIAN-FEN, YANG, VIOLA JUN-YA, YAO, YING
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The present invention provides a chemical mechanical polishing slurry for carbon-containing materials CMP and a method of use thereof. The chemical mechanical polishing slurry contains abrasives, oxidizers, carboxylic acid compounds and water. While maintaining a high removal rate of carbon-containing materials, the slurry effectively reduces the polishing by-products on the polishing pad surface, significantly improves the cleanliness of the pad surface, extends the pad lifetime and reduces the defects on the wafer surface after polishing.