Method for testing the stress robustness of a semiconductor substrate

Method for testing the stress robustness of a semiconductor substrate, comprising forming a nitride layer on a surface of the semiconductor substrate; patterning the nitride layer into a patterned nitride by photolithography including a step of reactive ion etching with ions produced from a gas which comprises hydrogen or a hydrogen compound or both; processing the patterned nitride and the semiconductor substrate at a temperature of not less than 800 DEG C and not more than 1300 DEG C to induce the formation of dislocations at an interface between the patterned nitride and the semiconductor substrate; and evaluating at least one property that is related to the formed dislocations.