Integrated circuit device and methods of fabricating thereof

Methods and devices of having an enclosure structure formed in a multi-layer interconnect and a through-silicon-via (TSV) extending through the enclosure structure. In some implementations, a protection layer is formed between the enclosure structure and the TSV.

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Bibliographische Detailangaben
Hauptverfasser: YAUNG, DUN-NIAN, KAO, MIN-FENG, LIN, HSINGIH, LIU, JENNG
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:Methods and devices of having an enclosure structure formed in a multi-layer interconnect and a through-silicon-via (TSV) extending through the enclosure structure. In some implementations, a protection layer is formed between the enclosure structure and the TSV.