Method for forming image sensor and CIS implant method
Provided herein are approaches for forming an image sensor with increased well depth due to cryogenic ion channeling of ultra-high energy (UHE) ions and a CIS implant method. In some embodiments, a method may include providing a wafer of a semiconductor device, the semiconductor device including a p...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | Provided herein are approaches for forming an image sensor with increased well depth due to cryogenic ion channeling of ultra-high energy (UHE) ions and a CIS implant method. In some embodiments, a method may include providing a wafer of a semiconductor device, the semiconductor device including a photoelectric conversion region, and cooling the wafer to a temperature less than -50 DEG C. The method may further include performing an ion implant to the photoelectric conversion region to form a photodiode well after cooling the wafer. |
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