Integrated circuit structure and manufacturing method thereof

A method of manufacturing an integrated circuit structure includes depositing a dielectric cap over a gate structure. A source/drain contact is formed over a source/drain region after forming the dielectric cap. A top of the dielectric cap is doped to form a doped region in the dielectric cap. After...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HSIUNG, TEIH, WANG, PENG, WU, JYUN-DE, LIN, HUAN-JUST
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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