Vertical cavity surface emitting laser (VCSEL) device and manufacturing method thereof having the characteristics of in-situ and one-shot epitaxy to avoid the risk of process variation in moving out/back to the epitaxial chamber

The present invention provides a vertical cavity surface emitting laser (VCSEL) device, which is sequentially stacked with: a substrate, a first mirror layer, a tunnel junction layer, a second mirror layer, an active layer, an oxide layer, and a third mirror layer, wherein the first mirror layer and the third mirror layer are n-type distributed Bragg reflector layer (N-DBR), and the second mirror layer is p-type distributed Bragg reflector layer (P-DBR). The use of the tunnel junction layer enables the VCSEL device to transpose a part of the P-DBR to N-DBR to reduce the series resistance of the VCSEL device, and the tunnel junction layer does not function as a current-limiting hole. The present invention also provides a method of manufacturing a VCSEL device, which has the characteristics of in-situ and one-shot epitaxy to avoid the risk of process variation in moving out/back to the epitaxial chamber.