Nitride semiconductor device with ultrananocrystalline diamond layer electrode structure in which the ultrananocrystalline diamond layer has the functions of a conductive layer and a thermal conductive layer at the same time

Nitride semiconductor device with ultrananocrystalline diamond layer electrode structure in which the ultrananocrystalline diamond layer has the functions of a conductive layer and a thermal conductive layer at the same time

The present invention provides a nitride semiconductor device with an ultrananocrystalline diamond layer electrode structure and a manufacturing method thereof. During the fabrication process of the nitride semiconductor device, a patterning treatment is applied to the semiconductor surface of the e...

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Bibliographische Detailangaben
Hauptverfasser: LIN, JIAING, CHEN, CHIH-TIEN, LIU, GUAN-SHIAN, KE, WENNG, CHANG, KUO-JEN
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present invention provides a nitride semiconductor device with an ultrananocrystalline diamond layer electrode structure and a manufacturing method thereof. During the fabrication process of the nitride semiconductor device, a patterning treatment is applied to the semiconductor surface of the electrode region, such that the ultrananocrystalline diamond layer can be more effectively attached to the surface of the nitride semiconductor. This ultrananocrystalline diamond layer can be used as an electrode layer and a thermal conduction layer to achieve the effect of improving the performance of the nitride semiconductor device.