Enhanced gallium nitride element with electrode-migrated P-type doping layer achieving the effects of reducing the gate leakage current and increasing the output current

Enhanced gallium nitride element with electrode-migrated P-type doping layer achieving the effects of reducing the gate leakage current and increasing the output current

This invention provides an enhanced gallium nitride element with an electrode-migrated P-type doping layer. The enhanced gallium nitride element includes an aluminium gallium nitride layer, a p-type gallium nitride doping layer formed on the aluminium gallium nitride layer and a gate metal for movin...

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Bibliographische Detailangaben
Hauptverfasser: LIN, JIAING, CHANG, YAUN, HO, YU-LI, CHEN, CHIH-TIEN, WU, CHAO-HSIN, CHANG, KUO-JEN
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:This invention provides an enhanced gallium nitride element with an electrode-migrated P-type doping layer. The enhanced gallium nitride element includes an aluminium gallium nitride layer, a p-type gallium nitride doping layer formed on the aluminium gallium nitride layer and a gate metal for moving the p-type gallium nitride doping layer in parallel, so that a part of the gate metal is plated on the p-type gallium nitride doping layer, the other part of the gate metal is plated on the aluminium gallium nitride layer, and then, the effects of reducing the gate leakage current and increasing the output current are achieved.