Apparatus and method for repairing a photolithographic mask and computer program comprising instructions

The present application relates to an apparatus (700) for processing a photolithographic mask (150, 200, 1500), said apparatus comprising: (a) at least one time-varying particle beam (410, 715), which is embodied for a local deposition reaction and/or a local etching reaction on the photolithographi...

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Bibliographische Detailangaben
Hauptverfasser: HOINKIS, OTTMAR, BUDACH, MICHAEL
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The present application relates to an apparatus (700) for processing a photolithographic mask (150, 200, 1500), said apparatus comprising: (a) at least one time-varying particle beam (410, 715), which is embodied for a local deposition reaction and/or a local etching reaction on the photolithographic mask (150, 200, 1500); (b) at least one first means (740, 750, 760) for providing at least one precursor gas, wherein the precursor gas is embodied to interact with the particle beam (410, 715) during the local deposition reaction and/or the local etching reaction; and (c) at least one second means (830, 930, 1050), which reduces a mean angle of incidence ([phi]) between the time-varying particle beam (410, 715) and a surface (115) of the photolithographic mask (150, 200, 1500).