Chemical mechanical polishing slurry and method of using the same
The invention provides a chemical mechanical polishing slurry for Copper CMP and a method of use thereof. Specifically, the chemical mechanical polishing slurry includes abrasive particle, complexing agent, azole corrosion inhibitor, carboxylic acid ester compound, and oxidizer. The chemical mechani...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a chemical mechanical polishing slurry for Copper CMP and a method of use thereof. Specifically, the chemical mechanical polishing slurry includes abrasive particle, complexing agent, azole corrosion inhibitor, carboxylic acid ester compound, and oxidizer. The chemical mechanical polishing slurry of the present invention can be used in Copper CMP with high Copper removal rate, high Copper to Tantalum removal rate selectivity. It also has good dishing and erosion control capability. |
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