Chemical mechanical polishing slurry and method of using the same

The present invention provides a chemical mechanical polishing slurry for carbon-containing materials CMP and a method of use thereof. The chemical mechanical polishing slurry contains abrasives, oxidizers, and inorganic acids and their salts. While maintaining a high removal rate of carbon-containing materials, the slurry effectively reduces the polishing by-products on the polishing pad surface, significantly improves the cleanliness of the pad surface, extends the pad lifetime and reduces the defects on the wafer surface after polishing.